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| 32.0-45.0 GHz GaAs MMIC Transmitter August 2006 - Rev 02-Aug-06 Features Sub-harmonic Transmitter Integrated Mixer, LO Doubler/Buffer & Output Amplifier +14.0 dBm Output Third Order Intercept (OIP3) +4.0 dBm LO Drive Level 5.0 dB Conversion Gain 100% On-Wafer RF and DC Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Mimix Broadband's 32.0-45.0 GHz GaAs MMIC transmitter has a +14.0 dBm output third order intercept across the band. This device is a balanced, resistive pHEMT mixer followed by a distributed output amplifier and includes an integrated LO doubler and LO buffer amplifier. The use of integrated LO doubler and LO buffer amplifier makes the provision of the LO easier than for fundamental mixers at these frequencies. IF and IF mixer inputs are provided and an external 180 degree hybrid is required to select the desired sideband. This MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications. Chip Device Layout U1004 General Description Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id1,Id2) Gate Bias Voltage (Vg) Input Power (IF Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +6.0 VDC 200, 180 mA +0.3 VDC 0.0 dBm -65 to +165 OC -55 to MTTF Table3 MTTF Table 3 (3) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life. Electrical Characteristics (Ambient Temperature T = 25o C) Parameter Frequency Range (RF) Upper Side Band Frequency Range (RF) Lower Side Band Frequency Range (LO) Frequency Range (IF) Output Return Loss RF (S22) Small Signal Conversion Gain IF/RF (S21) 2 LO Input Drive (PLO) Isolation LO/RF @ LOx1 Isolation LO/RF @ LOx2 Output Third Order Intercept (OIP3) 1,2 Drain Bias Voltage (Vd1,2) Gate Bias Voltage (Vg1,2) Gate Bias Voltage (Vg3,4) Mixer, Doubler Supply Current (Id1) (Vd1=4.0V, Vg=-0.3V Typical) Supply Current (Id2) (Vd2=4.0V, Vg=-0.3V Typical) Units GHz GHz GHz GHz dB dB dBm dB dB dBm VDC VDC VDC mA mA Min. 35.0 32.0 16.0 DC -1.2 -1.2 Typ. 10.0 5.0 +4.0 TBD TBD +14.0 +4.0 -0.3 -0.5 160 145 Max. 45.0 42.0 25.0 4.0 +5.5 +0.1 +0.1 180 165 Page 1 of 7 (1) Measured using constant current. (2) Measured using LO Input drive level of 0.0 dBm. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Characteristic Data and Specifications are subject to change without notice. (c)2006 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 32.0-45.0 GHz GaAs MMIC Transmitter August 2006 - Rev 02-Aug-06 U1004 Transmitter Measurements XU1004 Vd1,2=4.0 V, Id1=160 mA, Id2=145 mA, USB LO=+0.0 dBm, IF=2.0 GHz @ -15.0 dBm, ~1310 Devices 10 9 8 7 6 5 4 3 2 1 0 -1 -2 -3 -4 -5 30.0 Conversion Gain (dB) 31.0 32.0 33.0 34.0 35.0 36.0 37.0 38.0 39.0 40.0 41.0 42.0 43.0 44.0 45.0 RF Frequency (GHz) Max Median Mean -3sigma XU1004 Vd1,2=4.0 V, Id1=160 mA, Id2=145 mA, LSB LO=+0.0 dBm, IF=2.0 GHz @ -15.0 dBm, ~1310 Devices 10 9 8 7 6 5 4 3 2 1 0 -1 -2 -3 -4 -5 30.0 Conversion Gain (dB) 31.0 32.0 33.0 34.0 35.0 36.0 37.0 38.0 39.0 40.0 41.0 42.0 43.0 44.0 45.0 RF Frequency (GHz) Max Median Mean -3sigma XU1004 Vd1,2=4.0 V, Id1=160 mA, Id2=145 mA, USB/LSB LO=+0.0 dBm, IF=2.0 GHz @ -15.0 dBm, ~1680 Devices 0 RF Return Loss (dB) -5 -10 -15 -20 -25 -30 30.0 31.0 32.0 33.0 34.0 35.0 36.0 37.0 38.0 39.0 40.0 41.0 42.0 43.0 44.0 45.0 RF Frequency (GHz) Max Median Mean -3sigma Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 2 of 7 Characteristic Data and Specifications are subject to change without notice. (c)2006 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 32.0-45.0 GHz GaAs MMIC Transmitter August 2006 - Rev 02-Aug-06 U1004 0.921 (0.036) 2 Mechanical Drawing 1.620 (0.064) 1.621 (0.064) 3 2.220 (0.087) 4 5 0.646 (0.025) 0.295 (0.012) 0.0 1 10 9 8 7 6 0.0 0.921 (0.036) 1.621 (0.064) 2.021 (0.080) 2.421 (0.095) 2.821 (0.111) 3.970 (0.156) (Note: Engineering designator is 40TX0531) Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad. Thickness: 0.110 +/- 0.013 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold All DC/IF Bond Pads are 0.100 x 0.100 (0.004 x 0.004). All RF Bond Pads are 0.100 x 0.200 (0.004 x 0.008) Bond pad centers are approximately 0.109 (0.004) from the edge of the chip. Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 3.987 mg. Bond Pad #1 (RF Out) Bond Pad #3 (IF1) Bond Pad #2 (Vd1) Bond Pad #4 (Vd2) Bond Pad #5 (LO) Bond Pad #6 (Vg4) Bond Pad #7 (Vg2) Bond Pad #8 (Vg3) Bond Pad #7 (IF2) Bond Pad #8 (Vg1) Bias Arrangement Vd1 IF1 2 3 4 Bypass Capacitors - See App Note [2] Vd1 Vd2 Vd2 IF1 5 LO RF LO Vg4 RF 1 10 9 8 7 6 Vg1 IF2 Vg3 Vg2 Vg4 IF2 Vg1 Vg2 Page 3 of 7 Vg3 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Characteristic Data and Specifications are subject to change without notice. (c)2006 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 32.0-45.0 GHz GaAs MMIC Transmitter August 2006 - Rev 02-Aug-06 App Note [1] Biasing - As shown in the bonding diagram, this device is operated by separately biasing Vd1 and Vd2 with Vd(1,2)=4.0V, U1004 Id1=160mA and Id2=145mA. Additionally, a mixer and doubler bias are also required with Vg3=Vg4=-0.5V. Adjusting Vg3 and Vg4 above or below this value can adversely affect conversion gain, LO/RF isolation and intercept point performance. It is also recommended to use active biasing to keep the currents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is -0.3V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply. App Note [2] Bias Arrangement For Parallel Stage Bias (Recommended for general applications) -- The same as Individual Stage Bias but all the drain or gate pad DC bypass capacitors (~100-200 pF) can be combined. Additional DC bypass capacitance (~0.01 uF) is also recommended to all DC or combination (if gate or drains are tied together) of DC bias pads. For Individual Stage Bias -- Each DC pad (Vd1,2 and Vg1,2,3,4) needs to have DC bypass capacitance (~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended. MTTF Tables (TBD) These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry. Backplate Temperature 55 deg Celsius 75 deg Celsius 95 deg Celsius Channel Temperature deg Celsius deg Celsius deg Celsius Rth MTTF Hours FITs C/W C/W C/W E+ E+ E+ E+ E+ E+ Bias Conditions: Vd1=Vd2=4.0V, Id1=160 mA, Id2=145 mA Typical Application RF OUT 37.0-39.5 GHz XP1005 XU1004 Coupler IF In 2 GHz Mixer X Buffer X2 LO(+2.0dBm) 17.5-18.75 GHz (USB Operation) 19.5-20.75 GHz (LSB Operation) Mimix Broadband MMIC-based 32.0-45.0 GHz Receiver Block Diagram (Changing LO and IF frequencies as required allows design to operate as high as 45 GHz) Mimix Broadband's 32.0-45.0 GHz XU1004 GaAs MMIC Transmitter can be used in saturated radio applications and linear modulation schemes up to 128 QAM. The receiver can be used in upper and lower sideband applications from 32.0-45.0 GHz. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 4 of 7 Characteristic Data and Specifications are subject to change without notice. (c)2006 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 32.0-45.0 GHz GaAs MMIC Transmitter August 2006 - Rev 02-Aug-06 U1004 App Note [3] USB/LSB Selection - LSB USB For Upper Side Band operation (USB): With IF1 and IF2 connected to the direct port (0) and coupled port (180) respectively as shown in the diagram, the USB signal will reside on the isolated port. The input port must be loaded with 50 ohms. IF2 IF1 For Lower Side Band operation (LSB): With IF1 and IF2 connected to the direct port (0) and coupled port (180) respectively as shown in the diagram, the LSB signal will reside on the input port. The isolated port must be loaded with 50 ohms. An alternate method of Selection of USB or LSB: USB LSB In Phase Combiner In Phase Combiner -180 -180 IF2 IF1 IF2 IF1 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 5 of 7 Characteristic Data and Specifications are subject to change without notice. (c)2006 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 32.0-45.0 GHz GaAs MMIC Transmitter August 2006 - Rev 02-Aug-06 U1004 Block Diagram Vd1 IF1 Vd2 Device Schematic Output Amp RF Out RF Out RF In Mixer RF LO LO Out LO Buffer LO In Doubler LO Out LO In LO Vg5 Vg1 IF2 Vg3 Vg2 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 6 of 7 Characteristic Data and Specifications are subject to change without notice. (c)2006 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 32.0-45.0 GHz GaAs MMIC Transmitter August 2006 - Rev 02-Aug-06 Handling and Assembly Information Do not ingest. Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. U1004 CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded antistatic workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers. Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the backside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible. The mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies are Tanaka TS3332LD, Die Mat DM6030HK or DM6030HK-Pt cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the total die periphery. For additional information please see the Mimix "Epoxy Specifications for Bare Die" application note. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately 0.0012 thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280 C (Note: Gold Germanium should be avoided). The work station temperature should be 310 C +/- 10 C. Exposure to these extreme temperatures should be kept to minimum. The collet should be heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force impact are critical during placement. Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond pads. The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2% elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for DC Bias connections. Aluminum wire should be avoided. Thermo-compression bonding is recommended though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters. Bonds should be made from the bond pads on the die to the package or substrate. All bonds should be as short as possible. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 7 of 7 Characteristic Data and Specifications are subject to change without notice. (c)2006 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. |
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